unisonic technologies co., ltd ubv45 npn silicon transistor www.unisonic.com.tw 1 of 4 copyright ? 2010 unisonic technologies co., ltd qw-r201-081,d high voltage fast switching npn power applications ? description the device is manufactured usi ng high voltage multi epitaxial planar technology for high switching speeds and high voltage capability. the utc ubv45 is designed for use in compact fluorescent lamps. ? features * high voltage capability * low spread of dynamic parameters * very high switching speed ? ordering information ordering number pin assignment lead free plating halogen free package 1 2 3 packing ubv45l-t92-b UBV45G-T92-B to-92 e c b tape box ubv45l-t92-k ubv45g-t92-k to-92 e c b bulk
ubv45 npn silicon transistor unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r201-081,d ? absolute maximum ratings (ta = 25c) parameter symbol ratings unit collector emitter voltage (v be = 0) v ces 700 v collector emitter voltage (i b = 0) v ceo 400 v emitter base voltage (i c = 0) v ebo 9 v collector current i c 0.75 a collector peak current (t p < 5 ms) i cm 1.5 a base current i b 0.4 a base peak current (t p < 5 ms) i bm 0.75 a total dissipation at ta = 25c p d 0.95 w junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? theramal data parameter symbol ratings unit thermal resistance junction-ambient ja 130 c /w ? electrical characteristics (ta= 25c, unless otherwise specified) parameter symbol test conditions min typ max unit collector emitter sustaining voltage (i b = 0) (note) v ceo(sus) i c = 1 ma 400 v i c = 0.2 a , i b = 40 ma 0.2 0.5 i c = 0.3 a , i b = 75 ma 0.3 1 collector emitter satura tion voltage (note) v ce(sat) i c = 0.4 a , i b = 135 ma 0.4 1.5 v i c = 0.2 a , i b = 40 ma 1 base emitter saturati on voltage (note) v be(sat) i c = 0.3 a , i b = 75 ma 1.2 v emitter cut off current (i c = 0) i ebo v eb = 9 v 1 ma collector cut off current (v be = -1.5v) i cev v ce = 700 v 250 a i c = 0.2 a, v ce = 5 v 12 27 dc current gain h fe* i c = 0.4 a, v ce = 5 v 7 20 inductive load fall time t f i c = 0.2 a , v clamp = 300 v i b1 = -i b2 = 40 ma , l = 3 mh 0.3 s note: pulsed: puls e duration = 300 s, duty cycle = 1.5 % ? inductive load switching test circuit l c (3) i c v ce vcc i b (1) r bb(2) v bb - + i b1 (1) fast electronic switch (2) non-inductive resistor (3) fast recovery rectifier v clamp
ubv45 npn silicon transistor unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r201-081,d ? typical characterics v ce (v) 10 2 10 -3 2 4 6 8 2468 2468 246 10 1 10 0 10 -2 10 -1 safe operating area 2 4 6 8 2 4 6 8 2 4 t case ( ) 0 100 derating curve 80 60 40 20 25 50 75 100 125 120 10 0 10 1 10 3 150 140 175 80 s 300 s continuous
ubv45 npn silicon transistor unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r201-081,d utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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